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K9T1G08U0M - 128M x 8 Bits NAND Flash Memory

K9T1G08U0M_188231.PDF Datasheet


 Full text search : 128M x 8 Bits NAND Flash Memory


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SAMSUNG SEMICONDUCTOR CO. LTD.
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TOSHIBA[Toshiba Semiconductor]
EDS1232CASE-1A-E EDS1232CASE-1AL-E ER 8C 7#16 1#12 PIN RECP LINE 4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
128M bits SDRAM (4M words x 32 bits) 128兆位的SDRAM分字× 32位)
Elpida Memory, Inc.
EDD1232AAFA-7A-E EDD1232AAFA EDD1232AAFA-6B-E 128M bits DDR SDRAM (4M words x 32 bits)
ELPIDA[Elpida Memory]
EDD1216AATA-7B-E EDD1216AATA EDD1216AATA-6B-E EDD1 128M bits DDR SDRAM (8M words x 16 bits)
ELPIDA[Elpida Memory]
EDD1216AATA EDD1216AATA-6B-E EDD1216AATA-7B-E EDD1 128M bits DDR SDRAM (8M words x 16 bits)
http://
ELPIDA MEMORY INC
Elpida Memory, Inc.
K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G0 -2M x 8 Bit NAND Flash Memory
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Samsung Electronic
SAMSUNG[Samsung semiconductor]
EDS1232CASE-1AL-E EDS1232CASE EDS1232CASE-1A-E 128M bits SDRAM (4M words x 32 bits)
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TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
Toshiba Corporation
 
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